DocumentCode :
1065988
Title :
MP-B3 energy-resolved DLTS measurement of interface states in MOS devices
Author :
Johnson, Noble M.
Volume :
26
Issue :
11
fYear :
1979
fDate :
11/1/1979 12:00:00 AM
Firstpage :
1830
Lastpage :
1831
Keywords :
Capacitance measurement; Capacitance-voltage characteristics; Electron traps; Energy capture; Energy measurement; Interface states; MOS devices; Performance analysis; Pulse measurements; Spectroscopy;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19705
Filename :
1480283
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1065988
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