Title :
MP-B2 selective oxidation of silicon in RF-induced oxygen plasma
fDate :
11/1/1979 12:00:00 AM
Keywords :
Interface states; Isolation technology; Oxidation; Plasma materials processing; Plasma measurements; Plasma temperature; Semiconductor films; Silicon compounds; Stacking; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19707
