DocumentCode :
1066018
Title :
MP-B4 exact formulation of MOS C-V profiling
Author :
Bartelink, D.J.
Volume :
26
Issue :
11
fYear :
1979
fDate :
11/1/1979 12:00:00 AM
Firstpage :
1831
Lastpage :
1831
Keywords :
Capacitance-voltage characteristics; Charge carrier processes; Doping; Electrodes; Electron traps; Implants; Insulation; Sampling methods; Space charge; Very large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19708
Filename :
1480286
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1066018
