Title :
MP-B6 a nonvolatile static RAM cell utilizing a silicon dioxide, thin silicon nitride layer-silicon dioxide gate insulator
Author :
Waites, R.F. ; Sze Hon Kwan
fDate :
11/1/1979 12:00:00 AM
Keywords :
Insulation; MOSFETs; Nonvolatile memory; Polarization; Random access memory; Read-write memory; Silicon compounds; Subthreshold current; Threshold voltage; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19712
