• DocumentCode
    1066067
  • Title

    The resonant ATR (attenuated total reflectance) approach to semiconductor diagnostics and its application to the depth-profiling of multilayer structures

  • Author

    Bosacchi, Bruno ; Oehrle, Robert C.

  • Author_Institution
    AT&T Bell Lab., Princeton, NJ, USA
  • Volume
    25
  • Issue
    5
  • fYear
    1989
  • fDate
    5/1/1989 12:00:00 AM
  • Firstpage
    1086
  • Lastpage
    1092
  • Abstract
    The resonant ATR spectroscopy (attenuated total reflectance) approach is discussed as a way to enhance the sensitivity of optical measurements through the excitation of resonant modes. In particular, the application of the method to the depth profiling of a multilayer structure is considered. After reviewing some results which illustrate the sensitivity of the technique, its transfer to a manufacturing environment is discussed. Finally, preliminary wavelength ATR spectra which allow the simultaneous determination of thickness and composition of a multilayer structure are presented.
  • Keywords
    light reflection; reflectivity; reflectometry; semiconductors; spectroscopy; attenuated total reflectance spectroscopy; multilayer structures; resonant ATR; resonant modes; semiconductor diagnostics; sensitivity; Nonhomogeneous media; Optical attenuators; Optical reflection; Optical scattering; Optical sensors; Production; Reflectivity; Resonance; Semiconductor device manufacture; Spectroscopy;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.28004
  • Filename
    28004