Title :
TA-A4 n-type doping of InP by implantation and electron-beam annealing
Author :
Davies, D.E. ; Lorenzo, J.P. ; Ryan, T.G.
fDate :
11/1/1979 12:00:00 AM
Keywords :
Annealing; Chemical lasers; Doping; Gallium arsenide; Indium phosphide; Ion implantation; Laboratories; Photovoltaic cells; Silicon; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19713
