DocumentCode :
1066108
Title :
TA-A7 Ga implantation into Si at ultra-high dose rates
Author :
Kubena, R.L. ; Hart, R.R. ; Dunlap, H.L. ; Clark, M.D. ; Wang, Vivien ; Anderson, C. Lindsay
Volume :
26
Issue :
11
fYear :
1979
fDate :
11/1/1979 12:00:00 AM
Firstpage :
1834
Lastpage :
1835
Keywords :
Annealing; Chemical lasers; Gallium arsenide; Ion implantation; Laboratories; Leakage current; Optical pulses; Photovoltaic cells; Semiconductor lasers; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19717
Filename :
1480295
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1066108
