Title :
TA-A6 effect of laser annealing on the electrical characteristics of silicon on sapphire transistors
Author :
Yaron, G. ; Hess, L.D.
fDate :
11/1/1979 12:00:00 AM
Keywords :
Annealing; Chemical lasers; Electric variables; Gallium arsenide; Ion implantation; Laboratories; Leakage current; Photovoltaic cells; Semiconductor lasers; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19718
