DocumentCode

1066139

Title

TA-B1 very low current-threshold GaAs-AlxGa1-xAs double-heterostructure lasers grown by molecular beam epitaxy

Author

Tsang, W.T.

Volume

26

Issue

11

fYear

1979

fDate

11/1/1979 12:00:00 AM

Firstpage

1835

Lastpage

1835

Keywords

Current density; DH-HEMTs; Degradation; Gallium arsenide; Laser beams; Laser excitation; Mirrors; Molecular beam epitaxial growth; Photoluminescence; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1979.19720

Filename

1480298