Title :
TA-B9 1800-hour continuous operation of CW room-temperature AlxGa1-xAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition
fDate :
11/1/1979 12:00:00 AM
Keywords :
Chemical lasers; Chemical vapor deposition; DH-HEMTs; Gallium arsenide; Gas lasers; Life testing; Pulsed laser deposition; Quantum well lasers; Schottky diodes; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19725
