Title :
TP-A3 interaction of closely spaced junctions
Author :
Lee, S.C. ; Pearson, G.L.
fDate :
11/1/1979 12:00:00 AM
Keywords :
Electron devices; Fabrication; Gallium arsenide; Laboratories; P-n junctions; Photonic band gap; Photovoltaic cells; Schottky barriers; Semiconductor device doping; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19728
