Title :
TP-A1 enhancement of effective barrier height in a Ti-silicon Schottky diode using low-energy ion implantation
Author :
Li, S.S. ; Kim, C.S. ; Wang, K.L.
fDate :
11/1/1979 12:00:00 AM
Keywords :
Gallium arsenide; Heterojunctions; Ion implantation; Photovoltaic cells; Schottky barriers; Schottky diodes; Semiconductor process modeling; Silicon; Solid state circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19729
