DocumentCode :
1066245
Title :
TP-A2 barrier height enhancement in heterojunction Schottky-barrier solar cells
Author :
Yang, H.T. ; Shen, Y.D. ; Edwall, D.D. ; Miller, Douglas L. ; Harris, J.S.
Volume :
26
Issue :
11
fYear :
1979
fDate :
11/1/1979 12:00:00 AM
Firstpage :
1838
Lastpage :
1838
Keywords :
Doping; Gallium arsenide; Heterojunctions; P-n junctions; Photovoltaic cells; Power conversion; Schottky barriers; Schottky diodes; Semiconductor process modeling; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19730
Filename :
1480308
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1066245
