DocumentCode
1066266
Title
TP-A4 C-V profiling through n-n heterojunctions
Author
Kroemer, H.
Volume
26
Issue
11
fYear
1979
fDate
11/1/1979 12:00:00 AM
Firstpage
1839
Lastpage
1839
Keywords
Capacitance-voltage characteristics; Electrons; Heterojunctions; Microwave theory and techniques; Monitoring; Oxidation; P-n junctions; Photovoltaic cells; Schottky barriers; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19732
Filename
1480310
Link To Document