DocumentCode

1066308

Title

TP-B4 195 K Low-leakage InAsSb photodiodes

Author

Tennant, W.E. ; Williams, George M. ; Riedel, R.A. ; Andrews, A.M.

Volume

26

Issue

11

fYear

1979

fDate

11/1/1979 12:00:00 AM

Firstpage

1840

Lastpage

1841

Keywords

Annealing; Detectors; Diodes; Electron optics; Epitaxial growth; Optical surface waves; P-n junctions; Photodiodes; Substrates; Temperature sensors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1979.19736

Filename

1480314