مرکز منطقه ای اطلاع رساني علوم و فناوري - TP-B4 195 K Low-leakage InAsSb photodiodes

DocumentCode :

1066308

Title :

TP-B4 195 K Low-leakage InAsSb photodiodes

Author :

Tennant, W.E. ; Williams, George M. ; Riedel, R.A. ; Andrews, A.M.

Volume :

Issue :

fYear :

1979

fDate :

11/1/1979 12:00:00 AM

Firstpage :

1840

Lastpage :

1841

Keywords :

Annealing; Detectors; Diodes; Electron optics; Epitaxial growth; Optical surface waves; P-n junctions; Photodiodes; Substrates; Temperature sensors;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1979.19736

Filename :

1480314

Link To Document :