DocumentCode :
1066308
Title :
TP-B4 195 K Low-leakage InAsSb photodiodes
Author :
Tennant, W.E. ; Williams, George M. ; Riedel, R.A. ; Andrews, A.M.
Volume :
26
Issue :
11
fYear :
1979
fDate :
11/1/1979 12:00:00 AM
Firstpage :
1840
Lastpage :
1841
Keywords :
Annealing; Detectors; Diodes; Electron optics; Epitaxial growth; Optical surface waves; P-n junctions; Photodiodes; Substrates; Temperature sensors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19736
Filename :
1480314
Link To Document :
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