• DocumentCode
    1066315
  • Title

    Irradiation of Bypass Diodes up to 2.2E14 Neutron/cm2 and 1.3 kGy for the FAIR Project

  • Author

    Floch, E. ; Mustafin, E. ; Moritz, G. ; Ramakers, H. ; Golubev, A. ; Borovlev, S. ; Rogov, V. ; Smirnov, G. ; Titarenko, Yu. ; Batyaev, V. ; Kantsyrev, A. ; Markov, N. ; Smolyakov, A. ; Hagedorn, D. ; Gharib, A.

  • Author_Institution
    Gesellschaft fur Schwer Ionen Forschung, Darmstadt
  • Volume
    17
  • Issue
    2
  • fYear
    2007
  • fDate
    6/1/2007 12:00:00 AM
  • Firstpage
    2462
  • Lastpage
    2465
  • Abstract
    The FAIR project planned at G.S.I. (Germany) requires the construction of several superconducting accelerator rings. One of the two synchrotron rings, named SIS300, will have dipoles with a central field of 6 T and a ramp rate of 1 T/s. In order to protect these fast-ramping magnets in case of a quench, each of them must be equipped with a diode stack that bypasses the magnet in case it quenches. In order to save time and money on R&D, we decided to use the same diode type as that mounted in LHC magnets. These diodes were previously tested at 77 K up to a fast neutron fluence (F) of 2.8E13 n/cm2 and a dose (D) of 2 kGy which are the expected radiation loads after 20 years of LHC operation. Having no definitive estimation of the losses in the SIS300, we arbitrarily targeted a fluence of 1E14 n/cm2. We irradiated six LHC type diodes at 77 K in six steps. The highest values measured were 1.31 kGy and 2.25E14 n/cm2. Before and after each irradiation step, the forward and reverse voltage characteristics of each diode were measured. This paper reports the results of these measurements, carried out at ITEP (Moscow).
  • Keywords
    superconducting devices; synchrotrons; FAIR Project; SIS300; bypass diode irradiation; diode stack; fast-ramping magnets; forward-reverse voltage characteristics; superconducting accelerator rings; synchrotron rings; Diodes; Large Hadron Collider; Magnets; Neutrons; Protection; Resistors; Synchrotrons; Temperature; Tungsten; Voltage; Cryogenic temperature; irradiation; power diode;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/TASC.2007.897854
  • Filename
    4277391