Title :
TP-C4 Vapor-phase growth of 1.3-µm InGaAsP/InP heterojunction lasers, LED´s, and APD´s
Author :
Olsen, G.H. ; Ettenberg, M. ; Kressel, H. ; Botez, D.
fDate :
11/1/1979 12:00:00 AM
Keywords :
Bandwidth; Current density; Delay; Geometrical optics; Heterojunctions; Indium phosphide; Photodiodes; Surface emitting lasers; Surface treatment; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19744
