Title :
TP-C8 auger profile study of the LPE InGaAsP-InP-InGaAsP and InGaAs-InP heterojunction interface
Author :
Feng, Ming ; Tashima, M.M. ; Stillman, G.E. ; Blattner, R.J.
fDate :
11/1/1979 12:00:00 AM
Keywords :
Chemicals; Contracts; Heterojunctions; Indium gallium arsenide; Indium phosphide; Laboratories; Lattices; P-n junctions; Substrates; Zinc;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19745
