Title :
TP-C15 guarded avalanche photodiodes in InP fabricated by a double ion implantation technique
Author :
Donnelly, J.P. ; Diadiuk, V. ; Armiento, C.A. ; Groves, S.H.
fDate :
11/1/1979 12:00:00 AM
Keywords :
Avalanche photodiodes; Diodes; Electric breakdown; Indium phosphide; Ion implantation; Laboratories; Laser modes; Leakage current; Optical surface waves; P-n junctions;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19754
