Title :
WA-A7 the effect of electron trapping on the performance of short-channel MOS/Bulk and MOS/SOS transistors
Author :
Sun, E. ; Forbes, L.
fDate :
11/1/1979 12:00:00 AM
Keywords :
Acceleration; Doping; Electron traps; MOS devices; MOSFETs; Phonons; Scattering; Sun; Temperature; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19761
