DocumentCode :
1066676
Title :
Threshold behavior of CW GaAs-AlGaAs injection lasers
Author :
Butler, Jerome K. ; Wang, Chung-Shu
Author_Institution :
Southern Methodist University, Dallas, TX, USA
Volume :
12
Issue :
3
fYear :
1976
fDate :
3/1/1976 12:00:00 AM
Firstpage :
165
Lastpage :
168
Abstract :
This paper investigates some of the properties of continuous wave (CW) (AlGa)As-GaAs injection lasers with Al in the active region. The active region gain at threshold 
th is estimated as a function of Al concentration in the active region. The basic configuration is a five-layer structure with GaAs as the two outer regions; the center region is Aly Ga1-y As and the two surrounding layers are Alx Ga1-x As .
th is estimated as a function of Al concentration in the active region. The basic configuration is a five-layer structure with GaAs as the two outer regions; the center region is AlKeywords :
Artificial intelligence; Gallium arsenide; Heat sinks; Heat transfer; Laser modes; Laser theory; Optical pulses; Refractive index; Region 2; Region 3;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1976.1069113
Filename :
1069113
Link To Document :
