Title :
WP-A3 The use of Si3N4for GaAs surface passivation: Electrical characteristics and applications to enhancement-type MISFET´s
Author :
Bayraktaroglu, B. ; Schuermeyer, F.L.
fDate :
11/1/1979 12:00:00 AM
Keywords :
Capacitance-voltage characteristics; Electric variables measurement; Gallium arsenide; Insulation; Optical films; Plasma chemistry; Plasma measurements; Plasma properties; Pollution measurement; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19772
