Title :
WP-A6 transferred-electron device development using silicon-ion implantation in GaAs
Author :
Dietrich, H.B. ; Christou, Alex ; Bark, M.L.
fDate :
11/1/1979 12:00:00 AM
Keywords :
Anodes; Doping profiles; Electrons; FETs; Failure analysis; Gallium arsenide; Implants; Molecular beam epitaxial growth; Substrates; Tin;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19774
