Electrical passivation in hydrogen plasma exposed GaN

Author

Pearton, S.J. ; Abernathy, C.R. ; Ren, Fengyuan

Author_Institution

Dept. of Mater. Sci., Florida Univ., Gainesville, FL

Volume

30

Issue

6

fYear

1994

fDate

3/17/1994 12:00:00 AM

Firstpage

527

Lastpage

528

Abstract

Lightly p-doped (3×10¹⁷ cm^-3) GaN grown on GaAs substrates by metal organic molecular beam epitaxy (MOMBE) shows deactivation of the residual acceptors on exposure to a microwave (2.45 GHz) hydrogen plasma at 250°C. Subsequent annealing to 350°C produces further dopant passivation, while higher temperatures (450°C) restore the initial conductivity. These results suggest that hydrogen carrier gases should be avoided during vapour phase growth of III-V nitrides

Keywords

III-V semiconductors; annealing; carbon; carrier mobility; chemical beam epitaxial growth; electronic conduction in crystalline semiconductor thin films; gallium compounds; passivation; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; 2.45 GHz; 250 to 450 C; GaAs; GaAs substrates; GaN; GaN:C-GaAs; H₂; H₂ carrier gases; H₂ plasma exposed GaN; III-V nitrides; MOMBE; annealing; dopant passivation; electrical passivation; lightly p-doped semiconductor; metal organic MBE; microwave plasma; molecular beam epitaxy; residual acceptors deactivation; vapour phase growth;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19940327

Filename

280526