Title :
WP-A5 refractory-passivated ion-implanted ohmic contacts to n-GaAs layers
Author :
Christou, Alex ; Davey, J.E. ; Dietrich, H.B.
fDate :
11/1/1979 12:00:00 AM
Keywords :
Annealing; Contact resistance; FETs; Gallium arsenide; Implants; Ion implantation; Metallization; Ohmic contacts; Performance gain; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19775
