DocumentCode

1066706

Title

WP-A5 refractory-passivated ion-implanted ohmic contacts to n-GaAs layers

Author

Christou, Alex ; Davey, J.E. ; Dietrich, H.B.

Volume

26

Issue

11

fYear

1979

fDate

11/1/1979 12:00:00 AM

Firstpage

1854

Lastpage

1854

Keywords

Annealing; Contact resistance; FETs; Gallium arsenide; Implants; Ion implantation; Metallization; Ohmic contacts; Performance gain; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1979.19775

Filename

1480353