• DocumentCode
    1066722
  • Title

    Response mechanism of SiC-based MOS field-effect gas sensors

  • Author

    Schalwig, Jan ; Kreisl, Patrick ; Ahlers, Simon ; Müller, Gerhard

  • Author_Institution
    Corp. Res. Centre, Munich, Germany
  • Volume
    2
  • Issue
    5
  • fYear
    2002
  • fDate
    10/1/2002 12:00:00 AM
  • Firstpage
    394
  • Lastpage
    402
  • Abstract
    SiC-based field-effect gas sensors with catalytic platinum electrodes (Pt-MOSiC) have been subjected to a series of gas response measurements. Structural analysis of the Pt electrodes revealed that the gas sensitivity and the selectivity of Pt-MOSiC gas sensors depend on two major parameters: the porosity and the catalytic activity of the Pt electrodes. Pt-MOSiC gas sensors with thick, dense Pt electrodes only exhibit hydrogen sensitivity, whereas Pt-MOSiCs with thin porous gates exhibit a broad range of gas sensitivities similar to resistive metal-oxide gas sensors. A model is put forward that explains the nonhydrogen gas response of Pt-MOSiC devices and of conventional polycrystalline metal-oxide materials on a common basis.
  • Keywords
    MIS devices; catalysis; gas sensors; platinum; porosity; semiconductor device measurement; silicon compounds; wide band gap semiconductors; MOS field-effect gas sensors; Pt-SiO2-SiC; catalytic activity; catalytic platinum electrodes; gas response measurements; gas sensitivity; nonhydrogen gas response; porosity; selectivity; structural analysis; Electrodes; Gas detectors; Gases; Hydrogen; Inorganic materials; MOSFETs; Platinum; Schottky diodes; Silicon carbide; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2002.806214
  • Filename
    1158764