Characterization of a silicon thermal gas-flow sensor with porous silicon thermal isolation

In this paper, the results of full characterization of a micromachined-silicon thermal gas flow sensor will be presented. The sensor is composed of two series of thermocouples on the right and left side of a polysilicon resistor, used as heater. The resistor and the hot contacts of the thermocouples lie on a thick porous silicon layer, which assures local thermal isolation, while the thermopile cold contacts lie on bulk silicon. Gas flow is parallel to the surface of the sensor and perpendicular to the resistor, which is heated at constant temperature. The power of the heater is stabilized by an external circuit, which provides a feedback current to compensate changes in the resistance of the heater under flow. Characterization of the sensor both under static conditions and under flow of different gases will be presented. The sensor shows high sensitivity [of the order of 175 × 10^-3 mV/(m/s)¹2/ per thermocouple] and very rapid response, below 1 ms, which makes it appropriate for use both under laminar and under turbulent flows.