• DocumentCode
    1066861
  • Title

    High-gain SiGe transimpedance amplifier array for a 12×10 Gb/s parallel optical-fiber link

  • Author

    Schild, Alexander ; Rein, Hans-Martin ; Müllrich, Jens ; Altenhain, Lars ; Blank, Jürgen ; Schrödinger, Karl

  • Author_Institution
    Ruhr-Univ. Bochum, Germany
  • Volume
    38
  • Issue
    1
  • fYear
    2003
  • fDate
    1/1/2003 12:00:00 AM
  • Firstpage
    4
  • Lastpage
    12
  • Abstract
    A transimpedance amplifier array for 12 parallel optical-fiber channels each operating at 10 Gb/s is presented, which is used in the receiver of short-distance links. It stands out for the following features: high gain (transimpedance 25 kΩ in the limiting mode), high input sensitivity and wide input dynamic range (input current swing from 20 to 240 μAp-p), constant output voltage swing (differential 0.5 Vp-p at 50 Ω load), and low power consumption (1.4 W) at a single supply voltage (5 V). Each channel has its own offset-current control circuit. To the best of the authors´ knowledge, the total throughput of 12×10 Gb/s=120 Gb/s is the highest value reported for a single-chip amplifier array. The target specifications have been achieved with the first technological run without needing any redesign. This fact demonstrates that the inherent severe crosstalk problems of such high-gain amplifier arrays can reliably be solved by applying adequate decoupling measures and simulation tools.
  • Keywords
    Ge-Si alloys; low-power electronics; optical crosstalk; optical fibre communication; optical receivers; semiconductor materials; 1.4 W; 120 Gbit/s; 20 to 240 muA; 5 V; SiGe; constant output voltage swing; crosstalk; decoupling measures; input sensitivity; offset-current control circuit; parallel optical-fiber link; power consumption; short-distance links; throughput; transimpedance amplifier array; wide input dynamic range; Dynamic range; Germanium silicon alloys; Optical amplifiers; Optical arrays; Optical crosstalk; Optical receivers; Optical sensors; Semiconductor optical amplifiers; Silicon germanium; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2002.806271
  • Filename
    1158776