A 3-V, 0.35-μm CMOS Bluetooth receiver IC

Author

Sheng, Wenjun ; Xia, Bo ; Emira, Ahmed E. ; Xin, Chunyu ; Valero-Lopez, A.Y. ; Moon, Sung Tae ; Sánchez-Sinencio, Edgar

Author_Institution

Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA

Volume

38

Issue

1

fYear

2003

fDate

1/1/2003 12:00:00 AM

Firstpage

30

Lastpage

42

Abstract

A fully integrated CMOS low-IF Bluetooth receiver is presented. The receiver consists of a radio frequency (RF) front end, a phase-locked loop (PLL), an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, and a frequency offset cancellation circuit. The highlights of the receiver include a low-power active complex filter with a nonconventional tuning scheme and a high-performance mixed-mode GFSK demodulator. The chip was fabricated on a 6.25-mm² die using TSMC 0.35-μm standard CMOS process. -82 dBm sensitivity at 1e-3 bit error rate, -10 dBm IIP3, and 15 dB noise figure were achieved in the measurements. The receiver active current is about 65 mA from a 3-V power supply.

Keywords

Bluetooth; CMOS integrated circuits; demodulators; frequency shift keying; mixed analogue-digital integrated circuits; radio receivers; 0.35 micron; 3 V; 65 mA; CMOS Bluetooth receiver IC; GFSK demodulator; Gaussian frequency shift keying; PLL; RF front end; TSMC standard CMOS process; active complex filter; frequency offset cancellation circuit; low-IF Bluetooth receiver; phase-locked loop; tuning scheme; Active filters; Bluetooth; CMOS integrated circuits; Circuit optimization; Demodulation; Frequency shift keying; Phase locked loops; Radio frequency; Radiofrequency integrated circuits; Receivers;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2002.806277

Filename

1158779