Title :
140 GHz indium phosphide Gunn diode
Author :
Crowley, J.D. ; Hang, Chung-Wei ; Fank, F.B. ; Wallace, H. Bruce
Author_Institution :
Litton Solid State, Santa Clara, CA
fDate :
3/17/1994 12:00:00 AM
Abstract :
An indium phosphide Gunn diode has been developed for operation at 140 GHz. Typical CW performance is 45 mW with 2.3% conversion efficiency at 140 GHz. The highest power obtained was 65 mW with an efficiency of 2.6% at 138 GHz
Keywords :
Gunn diodes; III-V semiconductors; indium compounds; 140 GHz; 2.3 percent; 2.6 percent; 45 mW; 65 mW; CW performance; EHF; Gunn diode; InP; MM-wave device; conversion efficiency; microwave diode; millimetre-wave operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940358
