• DocumentCode
    1066905
  • Title

    Operation of strained-layer (In,Ga)As quantum well lasers prepared on (112)B GaAs substrate

  • Author

    Sun, D. ; Towe, E.

  • Author_Institution
    Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA
  • Volume
    30
  • Issue
    6
  • fYear
    1994
  • fDate
    3/17/1994 12:00:00 AM
  • Firstpage
    497
  • Lastpage
    499
  • Abstract
    The operation of (In,Ga)As quantum well lasers prepared on [112]-oriented GaAs substrates is reported. Threshold current densities as low as 187 A/cm2 for a 1.57 mm-long device have been obtained under pulsed-mode operation. The demonstration of laser action in a heterostructure grown on the [112]-oriented substrate is important for the design of blue-green light emitters by second harmonic generation
  • Keywords
    III-V semiconductors; current density; gallium arsenide; indium compounds; optical harmonic generation; semiconductor lasers; (112)B GaAs substrate; 1.57 mm; GaAs; InGaAs; [112]-orientation; blue-green light emitters; design; heterostructure; laser action; pulsed-mode operation; second harmonic generation; strained-layer (In,Ga)As quantum well lasers; threshold current densities;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940328
  • Filename
    280545
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1066905