A signal-processing CMOS image sensor using a simple analog operation

Author

Muramatsu, Yoshinori ; Kurosawa, Susumu ; Furumiya, Masayuki ; Ohkubo, Hiroaki ; Nakashiba, Yasutaka

Author_Institution

ULSI Device Dev. Div., NEC Corp., Kanagawa, Japan

Volume

38

Issue

1

fYear

2003

fDate

1/1/2003 12:00:00 AM

Firstpage

101

Lastpage

106

Abstract

We have developed a high-density CMOS image sensor with a normal mode and three signal-processing function modes: wide dynamic-range mode, motion-detection mode, and edge-extraction mode. Small pixel size and real-time operation are achieved by using a four-transistor and one-capacitor pixel scheme and column-parallel on-chip analog operation. The chip includes 512 (H) ×384 (V) effective pixels. Each pixel has a sufficient fill factor of 24% in an area of 9.3×9.3 μm². The dynamic range at the wide dynamic-range mode is a maximum 97 dB against 51 dB at the normal-readout mode. The chip consumes 79 mW, and the gain-control amplifier and 8-b analog-to-digital converter operate at 46 frames/s using a 3.3-V single power supply.

Keywords

CMOS image sensors; analogue processing circuits; edge detection; 196608 pixel; 3.3 V; 384 pixel; 512 pixel; 79 mW; 9.3 micron; CMOS image sensor; analog operation; analog-to-digital converter; column-parallel on-chip analog operation; edge-extraction mode; fill factor; gain-control amplifier; motion-detection mode; normal mode; one-capacitor pixel scheme; pixel size; real-time operation; signal-processing image sensor; wide dynamic-range mode; Analog-digital conversion; CMOS image sensors; Capacitors; Circuits; Dynamic range; Energy consumption; Image sensors; MOSFETs; Optical arrays; Pixel;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2002.806285

Filename

1158786