Title :
A signal-processing CMOS image sensor using a simple analog operation
Author :
Muramatsu, Yoshinori ; Kurosawa, Susumu ; Furumiya, Masayuki ; Ohkubo, Hiroaki ; Nakashiba, Yasutaka
Author_Institution :
ULSI Device Dev. Div., NEC Corp., Kanagawa, Japan
fDate :
1/1/2003 12:00:00 AM
Abstract :
We have developed a high-density CMOS image sensor with a normal mode and three signal-processing function modes: wide dynamic-range mode, motion-detection mode, and edge-extraction mode. Small pixel size and real-time operation are achieved by using a four-transistor and one-capacitor pixel scheme and column-parallel on-chip analog operation. The chip includes 512 (H) ×384 (V) effective pixels. Each pixel has a sufficient fill factor of 24% in an area of 9.3×9.3 μm2. The dynamic range at the wide dynamic-range mode is a maximum 97 dB against 51 dB at the normal-readout mode. The chip consumes 79 mW, and the gain-control amplifier and 8-b analog-to-digital converter operate at 46 frames/s using a 3.3-V single power supply.
Keywords :
CMOS image sensors; analogue processing circuits; edge detection; 196608 pixel; 3.3 V; 384 pixel; 512 pixel; 79 mW; 9.3 micron; CMOS image sensor; analog operation; analog-to-digital converter; column-parallel on-chip analog operation; edge-extraction mode; fill factor; gain-control amplifier; motion-detection mode; normal mode; one-capacitor pixel scheme; pixel size; real-time operation; signal-processing image sensor; wide dynamic-range mode; Analog-digital conversion; CMOS image sensors; Capacitors; Circuits; Dynamic range; Energy consumption; Image sensors; MOSFETs; Optical arrays; Pixel;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2002.806285
