DocumentCode :
1066982
Title :
Failure distributions and area transformation of thin SiO2 films
Author :
Ditali, A. ; Black, William
Author_Institution :
Micron Technol. Inc., Boise, ID
Volume :
30
Issue :
6
fYear :
1994
fDate :
3/17/1994 12:00:00 AM
Firstpage :
487
Lastpage :
488
Abstract :
The failure distributions of a small area can be transformed to distributions of a larger area provided the data to be transformed exhibit a bimodal distribution with an extrinsic region that characterises the defect-related region explicitly. The defect density follows a power-law relationship that shows a decline in defect density as the area increases
Keywords :
MOS integrated circuits; electric breakdown of solids; failure analysis; insulated gate field effect transistors; insulating thin films; semiconductor-insulator boundaries; silicon compounds; MOS IC; MOSFET; Si-SiO2; area transformation; bimodal distribution; defect density; defect-related region; extrinsic region; failure distributions; power-law relationship; thin SiO2 films;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940322
Filename :
280552
Link To Document :
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