Title :
Detection of slow traps in the oxide of MOS transistors by a new current DLTS technique
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble
fDate :
3/17/1994 12:00:00 AM
Abstract :
It is shown that in MOS transistors, the traps in the oxide that interact with the semiconductor by the tunnelling of carriers, induce a transient on the drain current when the device is switched from accumulation to strong inversion. Their density can be extracted as in deep level transient spectroscopy
Keywords :
deep level transient spectroscopy; electron traps; hole traps; insulated gate field effect transistors; semiconductor device testing; tunnelling; MOS transistors; MOSFET oxide; accumulation; carrier tunnelling; current DLTS technique; deep level transient spectroscopy; drain current transient; semiconductor; slow traps detection; strong inversion; trap density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940345
