Comparison of various GaAs materials used for gamma-ray pulses characterisation

Author

Foulon, F. ; Brullot, B. ; Rubbelynck, C. ; Bergonzo, P. ; Pochet, T.

Author_Institution

CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France

Volume

43

Issue

3

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

1372

Lastpage

1375

Abstract

Gallium arsenide resistive photoconductors are widely used for the characterisation of picosecond radiation pulses. They are used to measure both the intensity and the temporal shape of the pulse. We have investigated the influence of the physical and electrical properties of high resistivity GaAs crystals (LEC, VGF) supplied by various manufacturers on the detector response to fast visible and gamma-ray pulses. The detector characteristics: response time and sensitivity, were tested both before and after pre-irradiation with fission neutrons at integrated doses in the range 5×10¹⁴ to 1×10 ¹⁶ neutrons/cm². The original GaAs material properties were found to have a significant influence on the neutron pre-irradiated photoconductor response times and sensitivities for integrated doses up to 1×10¹⁵ neutrons/cm²

Keywords

Hall mobility; III-VI semiconductors; crystal defects; gallium arsenide; gamma-ray detection; infrared detectors; neutron effects; semiconductor counters; 1.2 MeV; 1064 nm; 30 ns; 30 ps; GaAs; GaAs crystals; GaAs detector; Hall mobility; IR radiation; deep levels; defects; fission neutrons; gamma-ray pulses; neutron irradiation; photoconductor; picosecond pulses; resistivity; response time; sensitivity; Conductivity; Crystalline materials; Delay; Gallium arsenide; Neutrons; Photoconducting materials; Photoconductivity; Pulse measurements; Pulse shaping methods; Shape measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.507068

Filename

507068