Title :
Comparison of various GaAs materials used for gamma-ray pulses characterisation
Author :
Foulon, F. ; Brullot, B. ; Rubbelynck, C. ; Bergonzo, P. ; Pochet, T.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
fDate :
6/1/1996 12:00:00 AM
Abstract :
Gallium arsenide resistive photoconductors are widely used for the characterisation of picosecond radiation pulses. They are used to measure both the intensity and the temporal shape of the pulse. We have investigated the influence of the physical and electrical properties of high resistivity GaAs crystals (LEC, VGF) supplied by various manufacturers on the detector response to fast visible and gamma-ray pulses. The detector characteristics: response time and sensitivity, were tested both before and after pre-irradiation with fission neutrons at integrated doses in the range 5×1014 to 1×10 16 neutrons/cm2. The original GaAs material properties were found to have a significant influence on the neutron pre-irradiated photoconductor response times and sensitivities for integrated doses up to 1×1015 neutrons/cm2
Keywords :
Hall mobility; III-VI semiconductors; crystal defects; gallium arsenide; gamma-ray detection; infrared detectors; neutron effects; semiconductor counters; 1.2 MeV; 1064 nm; 30 ns; 30 ps; GaAs; GaAs crystals; GaAs detector; Hall mobility; IR radiation; deep levels; defects; fission neutrons; gamma-ray pulses; neutron irradiation; photoconductor; picosecond pulses; resistivity; response time; sensitivity; Conductivity; Crystalline materials; Delay; Gallium arsenide; Neutrons; Photoconducting materials; Photoconductivity; Pulse measurements; Pulse shaping methods; Shape measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
