A low-voltage low-power voltage reference based on subthreshold MOSFETs

Author

Giustolisi, G. ; Palumbo, G. ; Criscione, M. ; Cutrì, F.

Author_Institution

DEES, Catania Univ., Italy

Volume

38

Issue

1

fYear

2003

fDate

1/1/2003 12:00:00 AM

Firstpage

151

Lastpage

154

Abstract

In this work, a new low-voltage low-power CMOS voltage reference independent of temperature is presented. It is based on subthreshold MOSFETs and on compensating a PTAT-based variable with the gate-source voltage of a subthreshold MOSFET. The circuit, designed with a standard 1.2-μm CMOS technology, exhibits an average voltage of about 295 mV with an average temperature coefficient of 119 ppm/°C in the range -25 to +125°C. A brief study of gate-source voltage behavior with respect to temperature in subthreshold MOSFETs is also reported.

Keywords

CMOS analogue integrated circuits; compensation; integrated circuit design; low-power electronics; reference circuits; -25 to 125 degC; 1.2 micron; 295 mV; CMOS analog IC; PTAT-based variable compensation; gate-source voltage behaviour; low-power CMOS voltage reference; low-voltage CMOS reference; subthreshold MOSFETs; CMOS analog integrated circuits; CMOS technology; Capacitance; Doping; Integrated circuit technology; Low voltage; MOSFETs; Permittivity; Temperature distribution; Threshold voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2002.806266

Filename

1158795