Title :
Technique for monitoring slow interface trap characteristics in MOS capacitors
Author :
Tanner, Philip ; Dimitrijev, Sima ; Harrison, H.B.
Author_Institution :
Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld.
fDate :
10/12/1995 12:00:00 AM
Abstract :
A new experimental technique presented in the Letter simultaneously extracts the trap response time as well as trap density and energy in the silicon bandgap. The technique is illustrated by measuring the trap density increase in a MOS capacitor due to constant current stressing and is compared with the results obtained using the conventional quasistatic C/V technique
Keywords :
MOS capacitors; electron traps; interface states; MOS capacitors; Si; constant current stressing; quasistatic C/V technique; silicon bandgap; slow interface traps; trap density; trap energy; trap response time;
Journal_Title :
Electronics Letters
