Title :
Mobility degradation in gated Si:SiGe quantum wells with thermally grown oxides
Author :
Prasad, R.S. ; Thornton, Trevor J. ; Kanjanachuchai, S. ; Fernandez, J. ; Matsumura, Akira
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London
fDate :
10/12/1995 12:00:00 AM
Abstract :
The authors have grown thermal oxides on the silicon cap layer or modulation doped n-channel Si:SiGe quantum wells. For growth temperatures of 650°C they have observed a degradation of the low temperature electron mobility accompanied by a small increase in the sheet density. Some possible origins for this mobility degradation are discussed
Keywords :
Ge-Si alloys; electron mobility; elemental semiconductors; oxidation; semiconductor materials; semiconductor quantum wells; silicon; 650 C; Si-SiGe; degradation; low temperature electron mobility; modulation doped n-channel Si:SiGe quantum wells; sheet density; silicon cap layer; thermal oxides;
Journal_Title :
Electronics Letters
