• DocumentCode
    1067168
  • Title

    Ion implantation doping of Cd0.2Hg0.8Te for infrared detectors

  • Author

    Ryssel, Heiner ; Lang, Gerhard ; Biersack, Jochen P. ; Müller, Klaus ; Krüger, Wolfgang

  • Author_Institution
    Fraunhofer-Institut für Festkörpertechnologie, München, Germany
  • Volume
    27
  • Issue
    1
  • fYear
    1980
  • fDate
    1/1/1980 12:00:00 AM
  • Firstpage
    58
  • Lastpage
    62
  • Abstract
    A wide variety of elements were investigated as dopants for Cd0.2Hg0.8Te by ion implantation. In all cases the elements showed either n-type or p-type doping depending on their position in the periodic table. The best results could be obtained using silver and phosphorus. Diodes produced by implantation of these elements gave a responsivity up to 6 A/W. A new theory on the range and range straggling of ions in CdHgTe was developed and checked by profile measurements with boron.
  • Keywords
    Boron; Chemical elements; Doping; Infrared detectors; Ion implantation; P-n junctions; Photovoltaic systems; Silver; Solar power generation; Tellurium;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.19819
  • Filename
    1480612
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1067168