Title :
Ion implantation doping of Cd0.2Hg0.8Te for infrared detectors
Author :
Ryssel, Heiner ; Lang, Gerhard ; Biersack, Jochen P. ; Müller, Klaus ; Krüger, Wolfgang
Author_Institution :
Fraunhofer-Institut für Festkörpertechnologie, München, Germany
fDate :
1/1/1980 12:00:00 AM
Abstract :
A wide variety of elements were investigated as dopants for Cd0.2Hg0.8Te by ion implantation. In all cases the elements showed either n-type or p-type doping depending on their position in the periodic table. The best results could be obtained using silver and phosphorus. Diodes produced by implantation of these elements gave a responsivity up to 6 A/W. A new theory on the range and range straggling of ions in CdHgTe was developed and checked by profile measurements with boron.
Keywords :
Boron; Chemical elements; Doping; Infrared detectors; Ion implantation; P-n junctions; Photovoltaic systems; Silver; Solar power generation; Tellurium;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.19819
