DocumentCode
1067188
Title
Transverse junction waveguide InGaAs/lnP photodiode
Author
Luo, D.P. ; Zhu, J.T. ; Jiang, X.S. ; Kellner, A.L. ; Yu, Paul K. L.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA
Volume
31
Issue
21
fYear
1995
fDate
10/12/1995 12:00:00 AM
Firstpage
1872
Lastpage
1873
Abstract
A novel transverse InP/InGaAs/InP pn junction waveguide photodiode is demonstrated using in situ zinc diffusion before a regrowth step inside an organometallic vapour phase epitaxy reactor. The detector exhibits high speed, low leakage current, low capacitance and high breakdown voltage characteristics
Keywords
III-V semiconductors; electric breakdown; gallium arsenide; indium compounds; leakage currents; optical waveguide components; photocapacitance; photodetectors; photodiodes; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; InGaAs-InP; breakdown voltage characteristics; capacitance; leakage current; organometallic vapour phase epitaxy reactor; photodetectors; photodiode; regrowth step; transverse junction waveguide;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
475023
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