Title :
Transverse junction waveguide InGaAs/lnP photodiode
Author :
Luo, D.P. ; Zhu, J.T. ; Jiang, X.S. ; Kellner, A.L. ; Yu, Paul K. L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA
fDate :
10/12/1995 12:00:00 AM
Abstract :
A novel transverse InP/InGaAs/InP pn junction waveguide photodiode is demonstrated using in situ zinc diffusion before a regrowth step inside an organometallic vapour phase epitaxy reactor. The detector exhibits high speed, low leakage current, low capacitance and high breakdown voltage characteristics
Keywords :
III-V semiconductors; electric breakdown; gallium arsenide; indium compounds; leakage currents; optical waveguide components; photocapacitance; photodetectors; photodiodes; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; InGaAs-InP; breakdown voltage characteristics; capacitance; leakage current; organometallic vapour phase epitaxy reactor; photodetectors; photodiode; regrowth step; transverse junction waveguide;
Journal_Title :
Electronics Letters
