Title :
Sensitivity measurements of thick amorphous-silicon p-i-n nuclear detectors
Author :
Pochet, T. ; Ilie, A. ; Brambilla, A. ; Equer, B.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
fDate :
6/1/1996 12:00:00 AM
Abstract :
20 μm thick p-i-n diodes were deposited at high rate using a PECVD process. The p-i-n structures have been specifically tailored in order to sustain high reverse bias voltages and exhibit low leakage currents. Mean electric fields up to 5.105 V/cm have been applied to our devices. We report the electrical characterization of such devices in terms of I(V,T) curves. Different regimes have been identified and the activation energy of the reverse current is deduced. A spectral analysis of the noise has been performed. Electronic transport of both electrons and holes has been studied using a time of flight technique. Finally, the detector response to alpha and beta particles, and X-rays has been studied in order to measure the collection efficiencies of thick a-Si:H detectors
Keywords :
X-ray detection; alpha-particle detection; amorphous semiconductors; beta-ray detection; elemental semiconductors; hydrogen; leakage currents; p-i-n diodes; plasma CVD coatings; silicon; silicon radiation detectors; spectral analysis; PECVD; Si:H; X-rays; activation energy; alpha particles; beta particles; collection efficiencies; detector response; electrical characterization; high reverse bias voltages; low leakage currents; mean electric fields; reverse current; sensitivity measurements; spectral analysis; thick a-Si:H detectors; thick amorphous-Si p-i-n nuclear detectors; thick p-i-n diodes; time of flight technique; Aerospace electronics; Leakage current; Low voltage; Nuclear measurements; P-i-n diodes; PIN photodiodes; Spectral analysis; Thickness measurement; X-ray detection; X-ray detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
