DocumentCode :
1067271
Title :
Characteristics of RF injection locking of self-pulsing in an AlGaAs DH junction laser
Author :
Lee, T.P. ; Serra, Theresinha J B
Author_Institution :
Bell Telephone Laboratories, Inc., Holmdel, NJ, USA
Volume :
12
Issue :
6
fYear :
1976
fDate :
6/1/1976 12:00:00 AM
Firstpage :
368
Lastpage :
371
Abstract :
The minimum RF power required for injection locking of the light pulsations in the output of a CW room-temperature AlGaAs double-heterostructure (DH) junction laser was found to depend exponentially on ( 
), where 
is the RF injection frequency and fr is the self-pulsing frequency, and also, to depend inversely on the self-pulsing strength of the laser. Nearly 100-percent modulation depth is achievable at 
, and slight reduction of modulation depth occurs when 
.
), where is the RF injection frequency and f , and slight reduction of modulation depth occurs when .Keywords :
Circuits; DH-HEMTs; Diode lasers; Injection-locked oscillators; Laser stability; Masers; Power lasers; Power system harmonics; Radio frequency; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1976.1069166
Filename :
1069166
Link To Document :
