DocumentCode :
1067301
Title :
Hybrid IRCCD imaging array
Author :
Takigawa, Hiroshi ; Dohi, Masaji ; Ueda, Ryuiti
Author_Institution :
Fujitsu Laboratories Ltd., Hyogo-ku, Kobe, Japan
Volume :
27
Issue :
1
fYear :
1980
fDate :
1/1/1980 12:00:00 AM
Firstpage :
146
Lastpage :
150
Abstract :
A hybrid IRCCD for high background application has been successfully fabricated. The device consists of fifty Hg0.7Cd0.3Te detector diodes of 50-µm × 50-µm sensitive areas and a silicon CCD maltiplexer with input circuits on 40-µm centers having bucket background subtraction and blooming protection circuits. The noise-equivalent power (NEP) of the IRCCD is 5 × 10-14W-Hz-1/2at background photon flux level of 4 × 1015photons . cm-2s-1, integration time of 2 × 10-5s, and clock frequency of 3 × 106Hz. The noise source of the detector diodes limits the IRCCD performance. The IRCCD is also evaluated with the real-time raster-scanned thermal images displayed on a CRT monitor. Two-dimensional images are generated by using a scanning mirror. A fixed-pattern noise is reduced by comparison of an object video to the reference video stored in a memory. A noise-equivalent temperature difference of the system is 0.6°C at a frame rate of 30 Hz. Instantaneous field of view is 1 mrad × 1 mrad and the field of view of the system is 12° × 5.7°.
Keywords :
Background noise; Charge coupled devices; Circuit noise; Detectors; Diodes; Mercury (metals); Noise level; Protection; Silicon; Tellurium;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.19832
Filename :
1480625
Link To Document :
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