DocumentCode :
1067316
Title :
HgCdTe photoconductive detector array
Author :
Itoh, Makoto ; Takigawa, Hiroshi ; Ueda, Ryuiti
Author_Institution :
Fujitsu Laboratories, Ltd., Hyogo-ku, Kobe, Japan
Volume :
27
Issue :
1
fYear :
1980
fDate :
1/1/1980 12:00:00 AM
Firstpage :
150
Lastpage :
154
Abstract :
An Hg0.8Cd0.2Te photoconductive array of 200 elements has been developed. The array has uniform detectivity and the mean value of D*(12 µm, 1000, 1) field of view (FOV) 50° at 77 K is 3.2 × 1010cm. Hz1/2. W-1. The array was successfully fabricated under severe control of thermal flow during crystallization, carrier control by doping of indium impurity, and assembly of four chips each with 50 elements.
Keywords :
Assembly; Crystallization; Detectors; Doping; Impurities; Indium; Mercury (metals); Photoconductivity; Sensor arrays; Tellurium;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.19833
Filename :
1480626
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1067316
بازگشت