Experimental observation of large-signal behavior in trapped domain transferred electron devices

The large-signal behavior of the anode trapped domain diodes (n-GaAs) is experimentally studied. It was confirmed that the negative conductance of the diodes was bell shaped as a function of the magnitude of the terminal RF voltage, as predicted by the authors. The injection operation characteristics of the diodes were clarified: An oscillation can be initiated by applying an external microwave signal where a frequency difference between the oscillation and the signal is less than 20 MHz. While if the frequency difference becomes greater than 20 MHz, quenching behavior of oscillation is appeared due to the bell-shaped negative conductance of trapped domain diodes.