DocumentCode
1067478
Title
Alternate doping of p-type and n-type impurities for AlGaInP selfaligned stepped substrate (S3) lasers
Author
Anayama, C. ; Furuya, Atsushi ; Kondo, Makoto ; Sekiguchi, Yuta ; Kito, Y. ; Fukushima, Tetsuya ; Sugano, M. ; Tanahashi, Toshiyuki
Author_Institution
Fujitsu Labs. Ltd., Atsugi
Volume
30
Issue
7
fYear
1994
fDate
3/31/1994 12:00:00 AM
Firstpage
565
Lastpage
566
Abstract
The authors fabricated lateral pn junctions in AlGaInP by alternate doping on a stepped substrate composed of (100) and (411)A faces with Zn and Se. It was found that the alternately-doped area on the (100) face becomes a uniform n-type conduction region; this is attributed to carrier depletion in lightly Zn-doped regions. The alternately-doped area on the (411)A face becomes a uniform p-type conduction region due to strong Zn diffusion over the lightly Se-doped regions. Using alternate doping, the authors fabricated a selfaligned stepped substrate (S3) laser. The low resistivity and high-power operation (50°C 35 mW) of this laser are comparable to those of lasers fabricated using simultaneous impurity doping
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optical workshop techniques; semiconductor doping; semiconductor lasers; (100) face; (411)A faces; 35 mW; 50 C; AlGaInP; Se; Zn; alternate doping; carrier depletion; high-power operation; lateral pn junctions; lightly Se-doped regions; lightly Zn-doped regions; n-type impurities; ow resistivity; p-type; selfaligned stepped substrate (S3) lasers; semiconductor doping; semiconductor laser diode fabrication; strong Zn diffusion; uniform n-type conduction region; uniform p-type conduction region;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940391
Filename
280602
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