Title :
Design windows for low-high-low GaAs IMPATT´s
Author :
Namordi, Mooshi R. ; Coleman, Donald J., Jr.
Author_Institution :
Texas Instruments Incorporated, Dallas, TX
fDate :
1/1/1980 12:00:00 AM
Abstract :
An idealized device model is employed to determine the optimum material parameters for low-high-low (LHL) GaAs IMPATT´s. Experimental efficiencies of 15-GHz devices indicate the model is of considerable utility for LHL GaAs IMPATT design.
Keywords :
Buffer layers; Diodes; Doping; Gallium arsenide; Helium; Impurities; Ohmic contacts; Radio frequency; Space technology; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.19851
