DocumentCode
1067494
Title
Comparison between tensile-strained AlGaInP SQW and MQW LDs emitting at 615 nm
Author
Tanaka, T. ; Yanagisawa, H. ; Minagawa, S.
Author_Institution
Central Res. Lab., Hitachi Ltd., Kokubunji
Volume
30
Issue
7
fYear
1994
fDate
3/31/1994 12:00:00 AM
Firstpage
566
Lastpage
568
Abstract
The optimum design for tensile-strained quantum-well structures, and the laser characteristics of AlGaInP LDs emitting at 615-635 nm are investigated. MQW structures are effective in reducing threshold currents at wavelengths shorter than 620 nm. The lowest threshold current of 95 mA at 20°C is attained in a quaternary MQW LD emitting at 615 nm
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor lasers; 20 C; 615 to 635 nm; 95 mA; AlGaInP; MQW LDs; MQW structures; SQW; laser characteristics; optimum design; quaternary MQW LD; tensile-strained; tensile-strained quantum-well structures; threshold currents;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940413
Filename
280603
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