Title :
Design and analysis of a low power HEMT SRAM cell
Author :
Bratov, Vladimir ; Thiede, A. ; Staroselsky, V. ; Clark, Daniel
fDate :
10/12/1995 12:00:00 AM
Abstract :
Design and evaluation of a novel high speed low power static RAM cell in AlGaAs/GaAs quantum well technology is presented. A current sense amplifier to accompany this cell is also proposed. Simulation results show an access time of 700 ps with standby and active currents of 14 μA/bit and 0.29 mA/bit, respectively. The cell area is found to be comparable to that of the corresponding full DCFL cell
Keywords :
HEMT integrated circuits; III-V semiconductors; SRAM chips; aluminium compounds; field effect memory circuits; gallium arsenide; semiconductor quantum wells; 700 ps; AlGaAs-GaAs; AlGaAs/GaAs quantum well technology; access time; active current; cell area; current sense amplifier; high speed low power HEMT SRAM cell; simulation; standby current;
Journal_Title :
Electronics Letters
