• DocumentCode
    1067539
  • Title

    On the geometrical factor of lateral p-n-p transistors

  • Author

    Seo, Kwang-seok ; Kim, Choong-ki

  • Author_Institution
    Korea Institute of Electronics Technology, Seoul, Korea
  • Volume
    27
  • Issue
    1
  • fYear
    1980
  • fDate
    1/1/1980 12:00:00 AM
  • Firstpage
    295
  • Lastpage
    297
  • Abstract
    A simple analytical expression has been derived for the geometrical factor of lateral p-n-p transistors and is compared with the two-dimensional computer solution by Chou. Reasonable agreement has been found between the two analyses when (basewidth at the surface/junction depth) ≳ 0.5 and (epitaxial layer thickness/junction depth) l\\sim 3 .
  • Keywords
    Atomic layer deposition; Dielectric constant; Electric breakdown; Electron devices; MOSFETs; Permittivity; Semiconductor thin films; Silicon; Solid state circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.19855
  • Filename
    1480648
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1067539